生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
最大漏极电流 (Abs) (ID): | 1.9 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.7 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC6306PL99Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6306PS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6308P | FAIRCHILD |
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Dual P-Channel 2.5V Specified PowerTrench⑩ MO | |
FDC6310P | FAIRCHILD |
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Dual P-Channel 2.5V Specified PowerTrench MOSFET | |
FDC6310P | ONSEMI |
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双 P 沟道 PowerTrench® MOSFET,2.5V 指定,-20V,-2.2A | |
FDC6310PD84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6310PD87Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6310PL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6310PS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6312P | FAIRCHILD |
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Dual P-Channel 1.8V PowerTrench Specified MOSFET |