Datasheet > FDC6306PL99Z

FDC6306PL99Z

更新时间： 2024-09-16 07:48:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	61K
描述
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

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FDC6306PL99Z 数据手册

February 1999

FDC6306P

Dual P-Channel 2.5V Specified PowerTrench MOSFET

Features

General Description

These P-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain low gate charge for

superior switching performance.

• -1.9 A, -20 V. R_DS(on)= 0.170 Ω @ V_GS= -4.5 V

R_DS(on)= 0.250Ω @ V_GS= -2.5 V

• Low gate charge (3 nC typical).

• Fast switching speed.

These devices have been designed to offer exceptional

power dissipation in a very small footprint for applications

where the bigger more expensive SO-8 and TSSOP-8

packages are impractical.

• High performance trench technology for extremely

low R_DS(ON)

• SuperSOT -6 package: small footprint (72% smaller

than standard SO-8); low profile (1mm thick).

Applications

• Load switch

• Battery protection

• Power management

SuperSOT^TM-6

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

-20

(Note 1a)

Drain Current - Continuous

- Pulsed

-1.9

-5

(Note 1a)

(Note 1b)

P_D

Power Dissipation for Single Operation

0.96

0.9

(Note 1c)

0.7

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

130

C/W

Package Outlines and Ordering Information

Device Marking

306

Device

Reel Size

Tape Width

Quantity

3000 units

FDC6306P

7’’

8mm

1999 Fairchild Semiconductor Corporation

FDC6306P Rev. C

12 3 4 5

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