是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 10 weeks | 风险等级: | 0.95 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 1076075 | Samacsys Pin Count: | 6 |
Samacsys Part Category: | MOSFET (P-Channel) | Samacsys Package Category: | SOT23 (6-Pin) |
Samacsys Footprint Name: | TSOT-23 CASE419AG-01 ISSUE O | Samacsys Released Date: | 2018-05-25 05:45:28 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 2.3 A |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 0.115 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.96 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDC6318P | ONSEMI |
类似代替 |
双 P 沟道,PowerTrench® MOSFET,1.8V 指定,-12V,-2.5A | |
FDC6306P | ONSEMI |
类似代替 |
双 P 沟道,PowerTrench® MOSFET,2.5V 指定,-20V,-1.9A | |
FDC6506P | ONSEMI |
类似代替 |
双 P 沟道 PowerTrench® MOSFET,逻辑电平,-30V,-1.8A,17 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC6312P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6312PL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6318 | FAIRCHILD |
获取价格 |
Dual P-Channel 1.8V PowerTrench Specified MOSFET | |
FDC6318P | FAIRCHILD |
获取价格 |
Dual P-Channel 1.8V PowerTrench Specified MOSFET | |
FDC6318P | ONSEMI |
获取价格 |
双 P 沟道,PowerTrench® MOSFET,1.8V 指定,-12V,-2.5A | |
FDC6318P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal | |
FDC6318PD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal | |
FDC6320 | FAIRCHILD |
获取价格 |
Dual N & P Channel , Digital FET | |
FDC6320C | FAIRCHILD |
获取价格 |
Dual N & P Channel , Digital FET | |
FDC6320C | ONSEMI |
获取价格 |
双 N 和 P 沟道数字 FET,25V |