是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 0.97 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 5356 |
Samacsys Pin Count: | 6 | Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | SOT23 (6-Pin) | Samacsys Footprint Name: | SSOT 6L |
Samacsys Released Date: | 2015-04-16 09:48:08 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 1.9 A | 最大漏极电流 (ID): | 1.9 A |
最大漏源导通电阻: | 0.17 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDC6318P | ONSEMI |
类似代替 |
双 P 沟道,PowerTrench® MOSFET,1.8V 指定,-12V,-2.5A | |
FDC6506P | ONSEMI |
类似代替 |
双 P 沟道 PowerTrench® MOSFET,逻辑电平,-30V,-1.8A,17 | |
FDC6312P | ONSEMI |
类似代替 |
双 P 沟道,PowerTrench® MOSFET,1.8V 指定,-20V,-2.3A |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDC6306P_NL | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6306PD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6306P-G | FAIRCHILD |
获取价格 |
Transistor | |
FDC6306PL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6306PS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6308P | FAIRCHILD |
获取价格 |
Dual P-Channel 2.5V Specified PowerTrench⑩ MO | |
FDC6310P | FAIRCHILD |
获取价格 |
Dual P-Channel 2.5V Specified PowerTrench MOSFET | |
FDC6310P | ONSEMI |
获取价格 |
双 P 沟道 PowerTrench® MOSFET,2.5V 指定,-20V,-2.2A | |
FDC6310PD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
FDC6310PD87Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal |