FDC6305

更新时间： 2024-09-14 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	247K
描述
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET

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中文翻译

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数据手册

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FDC6305 数据手册

March 1999

FDC6305N

Dual N-Channel 2.5V Specified PowerTrench^TMMOSFET

Features

General Description

• 2.7 A, 20 V. R_DS(ON)= 0.08 Ω @ V_GS= 4.5 V

R_DS(ON)= 0.12 Ω @ V_GS= 2.5 V

These N-Channel low threshold 2.5V specified

MOSFETs are produced using Fairchild Semiconductor's

advanced PowerTrench process that has been

especially tailored to minimize on-state resistance and

yet maintain low gate charge for superior switching

performance.

• Low gate charge (3.5nC typical).

• Fast switching speed.

Applications

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• DC/DC converter

• Motor driving

• SuperSOT^TM-6 package: small footprint (72% smaller

than standard SO-8); low profile (1mm thick).

SuperSOT ^TM-6

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

(Note 1a)

Drain Current - Continuous

- Pulsed

2.7

0.96

(Note 1a)

(Note 1b)

P_D

Power Dissipation for Single Operation

0.9

(Note 1c)

0.7

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

130

C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

.305

FDC6305N

7’’

8mm

3000 units

1999 Fairchild Semiconductor Corporation

FDC6305N, Rev. C

12 3 4 5 6 7 8

中文翻译

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与FDC6305相关器件

型号	品牌	获取价格	描述	数据表
FDC6305N	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，2.7A，8
FDC6306P	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench⑩ MO
FDC6306P	ONSEMI	获取价格	双 P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-1.9A
FDC6306P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
FDC6306PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
FDC6306P-G	FAIRCHILD	获取价格	Transistor
FDC6306PL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
FDC6306PS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal
FDC6308P	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench⑩ MO