Datasheet > FDC6303

FDC6303

更新时间： 2024-11-04 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	75K
描述
Digital FET, Dual N-Channel

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FDC6303 数据手册

August 1997

FDC6303N

Digital FET, Dual N-Channel

General Description

Features

25 V, 0.68 A continuous, 2 A Peak.

These dual N-Channel logic level enhancement mode field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state

resistance. This device has been designed especially for

R_DS(ON)= 0.6 W @ V_GS= 2.7 V

R_DS(ON)= 0.45 W @ V_GS= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V_GS(th)< 1.5 V.

low voltage applications as

a replacement for digital

transistors in load switching applications. Since bias

resistors are not required this one N-Channel FET can

replace several digital transistors with different bias

resistors like the IMHxA series.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors (IMHxA series)

with one DMOS FET.

SuperSOT^TM-8

SuperSOT^TM-6

SOT-23

SO-8

SOIC-16

SOT-223

Mark: .303

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

FDC6303N

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current

- Continuous

- Pulsed

0.68

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.9

0.7

T_J,T_STG

ESD

Operating and Storage Temperature Range

-55 to 150

6.0

°C

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

140

°C/W

R_q_JA

R_q_JC

FDC6303N Rev.C

12 3 4

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与FDC6303相关器件

型号	品牌	获取价格	描述	数据表
FDC6303N	FAIRCHILD	获取价格	Digital FET, Dual N-Channel
FDC6303N	ONSEMI	获取价格	双 N 沟道，数字 FET，25V，0.68A，0.45Ω
FDC6304P	FAIRCHILD	获取价格	Digital FET, Dual P-Channel
FDC6304P	ONSEMI	获取价格	双 P 沟道，数字 FET，-25V，-0.46A，1.1Ω
FDC6304PD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.48A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6304PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.46A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6304PS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.48A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6305	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
FDC6305N	ONSEMI	获取价格	双 N 沟道，PowerTrench® MOSFET，2.5V 指定，20V，2.7A，8