Datasheet > FDC6301

FDC6301

更新时间： 2024-09-13 22:49:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	77K
描述
Dual N-Channel , Digital FET

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FDC6301 数据手册

July 1997

FDC6301N

Dual N-Channel , Digital FET

General Description

Features

25 V, 0.22 A continuous, 0.5 A Peak.

These dual N-Channel logic level enhancement mode field

effect transistors are produced using Fairchild 's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance.

This device has been designed especially for low voltage

applications as a replacement for digital transistors. Since bias

resistors are not required, these N-Channel FET's can replace

several digital transistors, with a variety of bias resistors.

R_DS(ON)= 5 W @ V_GS= 2.7 V

R_DS(ON)= 4 W @ V_GS= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V_GS(th)< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model.

SuperSOT^TM-8

SuperSOT^TM-6

SOT-23

SO-8

SOIC-16

SOT-223

Mark: .301

Vcc

INVERTER APPLICATION

OUT

GND

Absolute Maximum Ratings T_A= 25^oC unless other wise noted

Symbol Parameter

FDC6301N

Units

V_DSS, V_CCDrain-Source Voltage, Power Supply Voltage

V_GSS, V_INGate-Source Voltage, V_IN

Drain/Output Current

- Continuous

- Pulsed

0.22

0.5

I_D, I_OUT

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.9

0.7

T_J,T_STG

ESD

Operating and Storage Temperature Range

-55 to 150

6.0

°C

Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

THERMAL CHARACTERISTICS

R_qJA

R_qJC

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

140

°C/W

FDC6301N Rev.C

12 3 4

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与FDC6301相关器件

型号	品牌	获取价格	描述	数据表
FDC6301N	FAIRCHILD	获取价格	Dual N-Channel , Digital FET
FDC6301N	ONSEMI	获取价格	双 N 沟道，数字 FET，25V，0.22A，4Ω
FDC6301N_01	FAIRCHILD	获取价格	Dual N-Channel , Digital FET
FDC6301N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Meta
FDC6301NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 2-Element, N-Channel, Silicon, Metal
FDC6302P	FAIRCHILD	获取价格	Digital FET, Dual P-Channel
FDC6302P	ONSEMI	获取价格	双 P 沟道，数字 FET，-25V，-0.12A，10Ω
FDC6302P_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6302PD84Z	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 25V, 2-Element, P-Channel, Silicon, Meta
FDC6302PD87Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.12A I(D), 25V, 2-Element, P-Channel, Silicon, Meta