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FDC608PZ

更新时间: 2024-09-14 04:18:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管脉冲光电二极管PC
页数 文件大小 规格书
5页 144K
描述
P-Channel 2.5V Specified PowerTrench MOSFET

FDC608PZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SSOT
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.28
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:5347Samacsys Pin Count:6
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:TSOT23 6?Lead CASE 419BL ISSUE O_1Samacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):5.8 A
最大漏极电流 (ID):5.8 A最大漏源导通电阻:0.043 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.6 W
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

FDC608PZ 数据手册

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June 2006  
tm  
FDC608PZ  
P-Channel 2.5V Specified PowerTrench® MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is produced  
–5.8 A, –20 V. RDS(ON) = 30 m@ VGS = –4.5 V  
RDS(ON) = 43 m@ VGS = –2.5 V  
using  
Fairchild  
Semiconductor’s  
advanced  
PowerTrench process that has been especially tailored  
to minimize the on-state resistance and yet maintain  
low gate charge for superior switching performance.  
Low Gate Charge  
High performance trench technology for extremely  
These devices are well suited for battery power  
applications: load switching and power management,  
battery power circuits, and DC/DC conversions.  
low RDS(ON)  
SuperSOT TM –6 package: small footprint (72%  
smaller than standard SO–8) low profile (1mm thick).  
S
D
D
1
2
3
6
5
4
G
D
SuperSOT TM-6  
D
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–20  
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
±12  
–5.8  
(Note 1a)  
–20  
PD  
Maximum Power Dissipation  
(Note 1a)  
(Note 1b)  
1.6  
W
0.8  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
30  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
.608Z  
FDC608PZ  
7’’  
8mm  
3000 units  
FDC608PZ Rev B (W)  
©2006 Fairchild Semiconductor Corporation  

FDC608PZ 替代型号

型号 品牌 替代类型 描述 数据表
FDC608PZ ONSEMI

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P 沟道,PowerTrench® MOSFET,2.5V 指定,-20V,-5.8A,3

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