Datasheet > FDC608PZ-F171

FDC608PZ-F171

更新时间： 2024-09-15 11:13:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	330K
描述
P 沟道，PowerTrench® MOSFET，2.5V 指定，-20V，-5.8A，30mΩ

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中文翻译

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FDC608PZ-F171 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

POWERTRENCH⁾

2.5 V Specified

TSOT−23−6

CASE 419BL

FDC608PZ, FDC608PZ-F171

Description

This P−Channel 2.5 V specified MOSFET is produced using

onsemi’s advanced POWERTRENCH process that has been

especially tailored to minimize the on−state resistance and yet

maintain low gate charge for superior switching performance. These

devices are well suited for battery power applications: load switching

and power management, battery power circuits, and dc−dc

conversions.

Features

MARKING DIAGRAM

• –5.8 A, –20 V. R

= 30 mW @ V = –4.5 V

= 43 mW @ V = –2.5 V

DS(ON)

608Z MG

• Low Gate Charge

• High Performance Trench Technology for Extremely Low R

DS(ON)

• SuperSOT

–6 Package: Small Footprint (72% Smaller than

Standard SO–8) Low Profile (1 mm Thick)

608Z

= Specific Device Code

= Date Code

= Pb−Free Package

• These Devices are Pb−Free and Halide Free

(Note: Microdot may be in either location)

ABSOLUTE MAXIMUM RATINGS

Values are at T = 25°C unless otherwise noted.

ORDERING INFORMATION

Symbol

Parameter

Drain−Gate Voltage

Gate−Source Voltage

Drain Current – Continuous (Note 1a)

Ratings

–20

Unit

DSS

GSS

†

Package

Device

Shipping

TSOT−23−6

(Pb-Free/

3000 /

Tape & Reel

FDC608PZ

–5.8

–20

Halide Free)

– Pulsed

Maximum Power Dissipation (Note 1a)

(Note 1b)

1.6

0.8

TSOT−23−6

(Pb-Free/

3000 /

Tape & Reel

FDC608PZ−F171

Halide Free)

T , T

Operating and Storage Junction

Temperature Range

–55 to +150

°C

STG

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Values are at T = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

Thermal Resistance, Junction−to−Ambient

(Note 1a)

°C/W

Thermal Resistance, Junction−to−Case

(Note 1)

°C/W

Publication Order Number:

FDC608PZ/D

March 2022 − Rev. 3

12 3 4 5 6

中文翻译

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与FDC608PZ-F171相关器件

型号	品牌	获取价格	描述	数据表
FDC610PZ	FAIRCHILD	获取价格	P-Channel PowerTrench㈢ MOSFET
FDC610PZ	ONSEMI	获取价格	P 沟道，PowerTrench® MOSFET，-30V，-4.9A，42mΩ
FDC610PZ	KEXIN	获取价格	P-Channel MOSFET
FDC6301	FAIRCHILD	获取价格	Dual N-Channel , Digital FET
FDC6301N	FAIRCHILD	获取价格	Dual N-Channel , Digital FET
FDC6301N	ONSEMI	获取价格	双 N 沟道，数字 FET，25V，0.22A，4Ω
FDC6301N_01	FAIRCHILD	获取价格	Dual N-Channel , Digital FET
FDC6301N_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel, Silicon, Meta
FDC6301NS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 25V, 2-Element, N-Channel, Silicon, Metal
FDC6302P	FAIRCHILD	获取价格	Digital FET, Dual P-Channel

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