Datasheet > BSS123

BSS123

更新时间： 2024-11-06 11:13:15

品牌	Logo	应用领域
安森美 - ONSEMI		开关光电二极管晶体管场效应晶体管
页数	文件大小	规格书
8页	244K
描述
N沟道逻辑电平增强型场效应晶体管100V，170mA，6Ω

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中文翻译

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数据手册
替代型号

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BSS123 数据手册

DATA SHEET

www.onsemi.com

N-Channel Logic Level

Enhancement Mode Field

Effect Transistor

BSS123

General Description

These N−Channel enhancement mode field effect transistors are

produced using onsemi’s proprietary, high cell density, DMOS

technology. These products have been designed to minimize on−state

resistance while provide rugged, reliable, and fast switching

performance. These products are particularly suited for low voltage,

low current applications such as small servo motor control, power

MOSFET gate drivers, and other switching applications.

SOT−23−3

CASE 318−08

MARKING DIAGRAM

Features

Drain

• 0.17 A, 100 V

♦ R

= 6 ꢀ @ V = 10 V

SAMG

DS(on)

= 10 ꢀ @ V = 4.5 V

DS(on)

• High Density Cell Design for Extremely Low R

• Rugged and Reliable

DS(on)

Gate

Source

• Compact Industry Standard SOT−23 Surface Mount Package

• This Device is Pb−Free and Halogen Free

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may vary

depending upon manufacturing location.

ORDERING INFORMATION

†

Device

BSS123,

Package

Shipping

SOT−23−3

(Pb−Free)

3000 /

BSS123−G

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

November, 2021 − Rev. 10

BSS123/D

12 3 4 5 6 7 8

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BSS123 替代型号

型号	品牌	替代类型	描述	数据表
MMBF170	ONSEMI	类似代替	N 沟道增强型场效应晶体管
2N7002ET1G	ONSEMI	类似代替	Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23
BSS123LT1G	ONSEMI	类似代替	Power MOSFET 170 mAmps, 100 Volts

与BSS123相关器件

型号	品牌	获取价格	描述	数据表
BSS123(Z)	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
BSS123,215	NXP	获取价格	BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin
BSS123/D87Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123/L99Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123/S62Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123_08	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_1	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_10	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSS123_FAIRCHILD	FAIRCHILD	获取价格
BSS123-13-F	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met