Datasheet > BSS123BKN3-0-T1-G

BSS123BKN3-0-T1-G

更新时间： 2025-07-20 01:16:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	447K
描述
N-Channel Enhancement Mode MOSFET

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中文翻译

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BSS123BKN3-0-T1-G 数据手册

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Spec. No. : C591N3

Issued Date : 2016.12.07

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode MOSFET

BVDSS

ID@VGS=10V, TA=25°C

100V

0.19A

BSS123BKN3

RDS(ON)@VGS=10V, ID=100mA

RDS(ON)@VGS=4.5V, ID=100mA

2.8Ω(typ)

3.0Ω(typ)

Features

• ESD protected gate

• Easily designed drive circuits

• Low-voltage drive

• High speed switching

• Pb-free lead plating and halogen-free package

• Easy to use in parallel

Symbol

Outline

SOT-23

BSS123BKN3

G：Gate

S：Source

D：Drain

Ordering Information

Device

Package

SOT-23

Shipping

BSS123BKN3-0-T1-G

3000 pcs / tape & reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T1 : 3000 pcs / tape & reel,7” reel

Product rank, zero for no rank products

Product name

BSS123BKN3

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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