Datasheet > BSS123K

BSS123K

更新时间： 2023-12-06 20:01:27

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	455K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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BSS123K 数据手册

BSS123K

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low Gate Threshold Voltage

I_D

BV_DSS

R_DS(ON)

Low Input Capacitance

T_A= +25°C

Fast Switching Speed

Low Input/Output Leakage

6Ω @ V_GS= 10V

230mA

178mA

100V

High Drain-Source Voltage Rating

10Ω @ V_GS= 4.5V

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/

Description and Applications

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) yet maintain superior switching performance, making it ideal

for high efficiency power management applications.

Mechanical Data



Small Servo Motor Control

Power MOSFET Gate Drivers

Switching Applications



Case: SOT23

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed over Leadframe (Lead Free

Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Weight: 0.008 grams (Approximate)

SOT23

ESD Protected

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

BSS123K-7

BSS123K-13

Case

SOT23

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

SOT23

K12 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: H = 2020)

K12

M = Month (ex: 9 = September)

Date Code Key

Year

2020

2021

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

Code

Aug

Sep

Oct

Nov

Dec

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

1 of 7

www.diodes.com

November 2020

BSS123K

Document number: DS42952 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

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与BSS123K相关器件

型号	品牌	获取价格	描述	数据表
BSS123K*	NCEPOWER	获取价格	新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFE
BSS123K2	FOSHAN	获取价格	SOT-23
BSS123KHE3	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
BSS123L	ONSEMI	获取价格	功率 MOSFET 170 mA，100 V，N 沟道 SOT-23
BSS123L6327HTSA1	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123L6433HTMA1	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123L99Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123-L99Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123LT1	ONSEMI	获取价格	Power MOSFET 170 mAmps, 100 Volts
BSS123LT1	MOTOROLA	获取价格	TMOS FET Transistor(N-Channel)

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