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BSS123-13-F PDF预览

BSS123-13-F

更新时间： 2024-02-07 08:54:49
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
5页 114K
描述
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

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中文翻译

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BSS123-13-F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.52配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：0.17 A
最大漏源导通电阻：10 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：6 pFJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

BSS123-13-F 数据手册

 浏览型号BSS123-13-F的Datasheet PDF文件第2页浏览型号BSS123-13-F的Datasheet PDF文件第3页浏览型号BSS123-13-F的Datasheet PDF文件第4页浏览型号BSS123-13-F的Datasheet PDF文件第5页 
BSS123  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
•
•
•
•
•
•
•
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
High Drain-Source Voltage Rating  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 1 and 2)  
ID  
V(BR)DSS  
RDS(ON)  
TA = 25°C  
100V  
0.17  
6.0Ω @ VGS = 10V  
Description and Applications  
Mechanical Data  
These N-Channel enhancement mode field effect transistors are  
produced using DIODES proprietary, high density, uses advanced  
trench technology.These products have been designed to minimize  
on-state resistance while provide rugged, reliable, and fast switching  
performance.These products are particularly suited for low voltage,  
low current applications such as  
•
•
Case: SOT23  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
•
•
Small servo motor control  
Power MOSFET gate drivers  
Switching applications  
•
•
Terminal Connections: See Diagram  
Weight: 0.008 grams (approximate)  
Drain  
SOT23  
D
Gate  
G
S
Source  
Equivalent Circuit  
Top View  
Top View  
Ordering Information (Note 3)  
Part Number  
BSS123-7-F  
BSS123Q-7-F  
BSS123-13-F  
BSS123Q-13-F  
Qualification  
Commercial  
Automotive  
Commercial  
Automotive  
Case  
Packaging  
SOT23  
SOT23  
SOT23  
SOT23  
3000 / Tape & Reel  
3000 / Tape & Reel  
10000 / Tape & Reel  
10000 / Tape & Reel  
Notes:  
1. No purposefully added lead. Halogen and Antimony Free.  
2. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code  
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb 2 O 3 Fire Retardants.  
3. For packaging details, go to our website at http://www.diodes.com  
Marking Information  
K23 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: T = 2006)  
K23  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
T
U
V
W
X
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 5  
www.diodes.com  
September 2011  
© Diodes Incorporated  
BSS123  
Document number: DS30366 Rev. 12 - 2  
12345

中文翻译

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