Datasheet > BSS123_FAIRCHILD

BSS123_FAIRCHILD

更新时间： 2024-11-05 23:35:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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BSS123_FAIRCHILD 数据手册

September 1996

BSS100 / BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

BSS100: 0.22A, 100V. R_DS(ON)= 6W @ V_GS= 10V.

These N-Channel logic level enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been especially tailored to

minimize on-state resistance, provide superior switching

performance. This product is particularly suited to low

voltage, low current applications, such as small servo

motor controls, power MOSFET gate drivers, and other

switching applications.

BSS123: 0.17A, 100V. R_DS(ON)= 6W @ V_GS= 10V

High density cell design for extremely low R_DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

_______________________________________________________________________________

BSS100

BSS123

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

BSS100

Symbol

Parameter

BSS123

Units

V_DSS

Drain-Source Voltage

100

V_DGR

Drain-Gate Voltage (R_GS< 20KW)

V_GSS

Gate-Source Voltage - Continuous

± 14

± 20

- Non Repetitive (T_P< 50 mS)

Drain Current - Continuous

- Pulsed

I_D

0.22

0.9

0.17

0.68

0.36

P_D

Total Power Dissipation @ T_A= 25°C

Operating and Storage Temperature Range

0.63

°C

T_J,T_STG

T_L

-55 to 150

300

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

THERMAL CHARACTERISTICS

R_q_JA

Thermal Resistacne, Junction-to-Ambient

200

350

°C/W

BSS100 Rev. F1 / BSS123 Rev. F1

12 3 4 5 6 7...10

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