Datasheet > BSS123(Z)

BSS123(Z)

更新时间： 2023-12-06 20:11:26

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	311K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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BSS123(Z) 数据手册

BSS123

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Features



For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q101, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

https://www.diodes.com/quality/product-definitions/



PARTMARKING DETAIL – SA

Absolute Maximum Ratings

Electrical Characteristics (@ T_A= +25°C, unless otherwise specified.)

(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

For typical characteristics graphs see ZVN3310F datasheet.

1 of 2

www.diodes.com

October 2019

BSS123

Document number: DS33020 Rev. 4 - 2

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型号	品牌	获取价格	描述	数据表
BSS123,215	NXP	获取价格	BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin
BSS123/D87Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123/L99Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123/S62Z	TI	获取价格	170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
BSS123_08	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_1	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_10	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSS123_FAIRCHILD	FAIRCHILD	获取价格
BSS123-13-F	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met
BSS123-3L	BL Galaxy Electrical	获取价格	0.17A, 100V, 0.35W, N Channel, Small Signal MOSFETs