Datasheet > BSS123_1

BSS123_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	359K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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BSS123_1 数据手册

SPICE MODEL: BSS123

BSS123

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

Low Gate Threshold Voltage

SOT-23

Low Input Capacitance

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Fast Switching Speed

Low Input/Output Leakage

High Drain-Source Voltage Rating

Lead Free/RoHS Compliant (Note 2)

TOP VIEW

Mechanical Data

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Drain

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Terminal Connections: See Diagram

Marking: K23 (See Page 3)

Gate

All Dimensions in mm

Ordering & Date Code Information: See Page 3

Weight: 0.008 grams (approximate)

Source

@ T_A= 25°C unless otherwise specified

Characteristic Symbol

Maximum Ratings

BSS123

100

Units

V_DSS

V_DGR

V_GSS

Drain-Source Voltage

100

Drain-Gate Voltage R_GS£ 20KW

Gate-Source Voltage

Continuous

±20

I_D

I_DM

Drain Current (Note 1)

Continuous

Pulsed

170

680

P_d

Total Power Dissipation (Note 1)

300

417

°C/W

°C

qJA

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

T_j, T_STG

-55 to +150

Note: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DS30366 Rev. 6 - 2

1 of 4

BSS123

www.diodes.com

ã Diodes Incorporated

12 3 4

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