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BSS123-7 PDF预览

BSS123-7

更新时间: 2024-01-07 08:44:57
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
3页 69K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

BSS123-7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:16 weeks风险等级:0.49
Samacsys Confidence:Samacsys Status:Released
Samacsys PartID:235970Samacsys Pin Count:3
Samacsys Part Category:Undefined or MiscellaneousSamacsys Package Category:Other
Samacsys Footprint Name:SOT95P240X110-3NSamacsys Released Date:2017-01-11 16:09:24
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):0.17 A
最大漏极电流 (ID):0.17 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):6 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSS123-7 数据手册

 浏览型号BSS123-7的Datasheet PDF文件第2页浏览型号BSS123-7的Datasheet PDF文件第3页 
BSS123  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
High Drain-Source Voltage Rating  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
D
B
B
C
C
TOP VIEW  
D
G
S
Mechanical Data  
D
G
E
E
·
·
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking: K23 (See Page 3)  
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approx.)  
H
G
H
K
M
J
J
L
K
Drain  
L
·
·
·
·
M
a
Gate  
All Dimensions in mm  
Source  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
BSS123  
100  
Units  
V
V
V
Drain-Source Voltage  
VDGR  
100  
Drain-Gate Voltage RGS £ 20KW  
Gate-Source Voltage  
VGSS  
Continuous  
±20  
ID  
IDM  
Drain Current (Note 1)  
Continuous  
Pulsed  
170  
680  
mA  
Pd  
Total Power Dissipation (Note 1)  
300  
417  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Note:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30366 Rev. 3 - 2  
1 of 3  
BSS123  
www.diodes.com  

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