5秒后页面跳转
捷配首页

Datasheet > BSS123_08
BSS123_08 PDF预览

BSS123_08

更新时间： 2024-09-16 09:00:35
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
3页 122K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

阅读下载

中文翻译

获取价格

BSS123_08 数据手册

 浏览型号BSS123_08的Datasheet PDF文件第2页浏览型号BSS123_08的Datasheet PDF文件第3页 
BSS123  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
High Drain-Source Voltage Rating  
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 2 and 4)  
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
Drain  
SOT-23  
D
Gate  
G
S
Source  
TOP VIEW  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
100  
Units  
V
V
V
100  
Drain-Gate Voltage RGS ≤ 20KΩ  
Gate-Source Voltage  
Continuous  
±20  
170  
680  
Drain Current (Note 1)  
Continuous  
Pulsed  
mA  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Pd  
Rθ  
Value  
300  
Units  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Drain-Source Breakdown Voltage  
Symbol Min Typ Max Unit  
Test Condition  
VGS = 0V, ID = 250μA  
VDS = 100V, VGS = 0V  
VDS = 20V, VGS = 0V  
VGS = 20V, VDS = 0V  
100  
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
1.0  
10  
µA  
nA  
Zero Gate Voltage Drain Current  
Gate-Body Leakage, Forward  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
50  
nA  
IGSSF  
⎯
0.8  
1.4  
2.0  
V
VGS(th)  
VDS = VGS, ID = 1mA  
VGS = 10V, ID = 0.17A  
VGS = 4.5V, ID = 0.17A  
VDS = 10V, ID = 0.17A, f = 1.0KHz  
VGS = 0V, IS = 0.34A  
⎯
⎯
80  
⎯
⎯
370  
6.0  
10  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
Forward Transconductance  
Drain-Source Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
mS  
V
gFS  
VSD  
⎯
0.84 1.3  
⎯
29  
10  
2
60  
15  
6
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
Output Capacitance  
pF VDS = 25V, VGS = 0V, f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Rise Time  
Turn-Off Fall Time  
Turn-On Delay Time  
8
16  
8
ns  
ns  
tr  
tf  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.28A,  
ns RGEN = 50Ω, VGS = 10V  
tD(ON)  
tD(OFF)  
Turn-Off Delay Time  
13  
ns  
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code  
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
May 2008  
© Diodes Incorporated  
BSS123  
Document number: DS30366 Rev.8 - 2  
123

中文翻译

下载PDF

与BSS123_08相关器件

型号 品牌 获取价格 描述 数据表
BSS123_1 DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123_10 INFINEON

获取价格

 		SIPMOS Small-Signal-Transistor
BSS123_FAIRCHILD FAIRCHILD

获取价格
BSS123-13-F DIODES

获取价格

 		Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met
BSS123-3L BL Galaxy Electrical

获取价格

 		0.17A, 100V, 0.35W, N Channel, Small Signal MOSFETs
BSS123-7 DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123-7-F DIODES

获取价格

 		N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS123A ZETEX

获取价格

 		N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
BSS123ATA ZETEX

获取价格

 		Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met
BSS123ATC DIODES

获取价格

 		Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Met

与BSS123_08相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证