Datasheet > BSS123-F169

BSS123-F169

更新时间： 2023-09-03 20:32:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管场效应晶体管
页数	文件大小	规格书
8页	244K
描述
N沟道逻辑电平增强型场效应晶体管100V，170mA，6Ω

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BSS123-F169 数据手册

DATA SHEET

www.onsemi.com

N-Channel Logic Level

Enhancement Mode Field

Effect Transistor

BSS123

General Description

These N−Channel enhancement mode field effect transistors are

produced using onsemi’s proprietary, high cell density, DMOS

technology. These products have been designed to minimize on−state

resistance while provide rugged, reliable, and fast switching

performance. These products are particularly suited for low voltage,

low current applications such as small servo motor control, power

MOSFET gate drivers, and other switching applications.

SOT−23−3

CASE 318−08

MARKING DIAGRAM

Features

Drain

• 0.17 A, 100 V

♦ R

= 6 ꢀ @ V = 10 V

SAMG

DS(on)

= 10 ꢀ @ V = 4.5 V

DS(on)

• High Density Cell Design for Extremely Low R

• Rugged and Reliable

DS(on)

Gate

Source

• Compact Industry Standard SOT−23 Surface Mount Package

• This Device is Pb−Free and Halogen Free

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or position may vary

depending upon manufacturing location.

ORDERING INFORMATION

†

Device

BSS123,

Package

Shipping

SOT−23−3

(Pb−Free)

3000 /

BSS123−G

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

November, 2021 − Rev. 10

BSS123/D

12 3 4 5 6 7 8

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