是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-236 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.01 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 0.17 A |
最大漏极电流 (ID): | 0.15 A | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 10 pF |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BSS123-7-F | DIODES |
功能相似 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS123 | FAIRCHILD |
功能相似 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
BSS123LT1G | ONSEMI |
功能相似 |
Power MOSFET 170 mAmps, 100 Volts |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS123/D87Z | TI |
获取价格 |
170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | |
BSS123/L99Z | TI |
获取价格 |
170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | |
BSS123/S62Z | TI |
获取价格 |
170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | |
BSS123_08 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS123_1 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
BSS123_10 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSS123_FAIRCHILD | FAIRCHILD |
获取价格 |
||
BSS123-13-F | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, P-Channel, Silicon, Met | |
BSS123-3L | BL Galaxy Electrical |
获取价格 |
0.17A, 100V, 0.35W, N Channel, Small Signal MOSFETs | |
BSS123-7 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |