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BSS123,215 PDF预览

BSS123,215

更新时间: 2024-11-06 21:18:51
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
4页 19K
描述
BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin

BSS123,215 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-236包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.01配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):0.17 A
最大漏极电流 (ID):0.15 A最大漏源导通电阻:6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.36 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSS123,215 数据手册

 浏览型号BSS123,215的Datasheet PDF文件第2页浏览型号BSS123,215的Datasheet PDF文件第3页浏览型号BSS123,215的Datasheet PDF文件第4页 
Philips Semiconductors  
Product specification  
N-channel TrenchMOS transistor  
Logic level FET  
BSS123  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
d
’Trench’ technology  
• Extremely fast switching  
• Logic level compatible  
• Subminiature surface mounting  
package  
VDSS = 100 V  
ID = 150 mA  
g
RDS(ON) 6 (VGS = 10 V)  
s
GENERAL DESCRIPTION  
PINNING  
SOT23  
N-channel enhancement mode  
field-effect transistor in a plastic  
PIN  
DESCRIPTION  
3
envelope  
using  
trench’  
1
2
3
gate  
technology.  
Top view  
source  
drain  
Applications:-  
• Relay driver  
• High-speed line driver  
• Telephone ringer  
1
2
The BSS123 is supplied in the  
SOT23 subminiature surface  
mounting package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDSS  
VDGR  
VGS  
ID  
IDM  
PD  
Drain-source voltage  
Drain-gate voltage  
Tj = 25 ˚C to 150˚C  
Tj = 25 ˚C to 150˚C; RGS = 20 k  
-
-
-
-
-
-
100  
100  
± 20  
150  
600  
0.25  
150  
V
V
V
mA  
mA  
W
Gate-source voltage  
Continuous drain current  
Pulsed drain current  
Total power dissipation  
Operating junction and  
storage temperature  
Ta = 25 ˚C  
Ta = 25 ˚C  
Ta = 25 ˚C  
Tj, Tstg  
- 55  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-a  
Thermal resistance junction surface mounted on FR4 board  
to ambient  
500  
-
K/W  
August 2000  
1
Rev 1.000  

BSS123,215 替代型号

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