Datasheet > BSP298_07

BSP298_07

更新时间： 2024-09-15 09:00:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	214K
描述
SIPMOS Small-Signal Transistor

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中文翻译

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数据手册

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BSP298_07 数据手册

BSP 298

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

• V

= 2.1 ... 4.0 V

GS(th)

• Pb-free lead plating; RoHS compliant

Pin 1

Pin 2

Pin 3

Pin 4

Type

Package

Marking

V_DS

I_D

R_DS(on)

BSP 298

400 V

0.5 A

SOT-223

BSP 298

Type

Pb-free

Tape and Reel Information

BSP 298

Yes

E6327

Maximum Ratings

Parameter

Symbol

Values

0.5

Unit

Continuous drain current

T = 26 °C

DC drain current, pulsed

Dpuls

T = 25 °C

Avalanche energy, single pulse

I = 1.35 A, V = 50 V, R = 25

L = 125 mH, T = 25 °C

130

Gate source voltage

Power dissipation

tot

T = 25 °C

1.8

Rev. 2.2 Semiconductor Group

2007-02-26

12 3 4 5 6 7...9

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