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BSP300 PDF预览

BSP300

更新时间: 2024-11-23 22:39:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲光电二极管局域网
页数 文件大小 规格书
8页 100K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

BSP300 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.15其他特性:AVALANCHE RATED
雪崩能效等级(Eas):36 mJ外壳连接:DRAIN
配置:SINGLE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):0.19 A最大漏极电流 (ID):0.19 A
最大漏源导通电阻:20 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4湿度敏感等级:3
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.8 W
最大脉冲漏极电流 (IDM):0.76 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSP300 数据手册

 浏览型号BSP300的Datasheet PDF文件第2页浏览型号BSP300的Datasheet PDF文件第3页浏览型号BSP300的Datasheet PDF文件第4页浏览型号BSP300的Datasheet PDF文件第5页浏览型号BSP300的Datasheet PDF文件第6页浏览型号BSP300的Datasheet PDF文件第7页 
BSP 300  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
V  
= 2.0... 4.0 V  
GS(th)  
Pin 1 Pin 2 Pin 3 Pin 4  
G
D
S
D
Type  
V
I
R
DS(on)  
Package  
Marking  
DS  
D
BSP 300  
800 V  
0.19 A  
20 Ω  
SOT-223  
BSP 300  
Type  
BSP 300  
BSP 300  
Ordering Code  
Q67050 -T0009  
Q67050-T0017  
Tape and Reel Information  
E6433  
E6327  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.19  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
0.76  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 0.8 A, V = 50 V, R = 25  
D
DD  
GS  
L = 105 mH, T = 25 °C  
36  
j
Gate source voltage  
Power dissipation  
V
P
± 20  
V
GS  
W
tot  
T = 25 °C  
1.8  
A
Semiconductor Group  
1
02/12/1996  

BSP300 替代型号

型号 品牌 替代类型 描述 数据表
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SIPMOS Small-Signal Transistor (N channel Enhancement mode)

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