是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-223 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.28 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (Abs) (ID): | 0.17 A |
最大漏极电流 (ID): | 0.17 A | 最大漏源导通电阻: | 25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.7 W | 最大脉冲漏极电流 (IDM): | 0.68 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BSP135 | INFINEON |
完全替代 ![]() |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
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BSP300L6327 | INFINEON |
类似代替 ![]() |
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Met |
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BSP125 | INFINEON |
功能相似 ![]() |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP324 H6327 | INFINEON |
获取价格 |
类型:N沟道;元器件封装:PG-SOT223-4; |
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BSP324E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Met |
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BSP324H6327XTSA1 | INFINEON |
获取价格 |
漏源电压Vdss(V):400 V ;额定电流Id(A):170mA(Ta) ;最大导通阻 |
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BSP324L6327 | INFINEON |
获取价格 |
SIPMOSï Power-Transistor |
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BSP324L6327HTSA1 | INFINEON |
获取价格 |
元器件封装:PG-SOT223-4; |
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BSP324_09 | INFINEON |
获取价格 |
SIPMOS Power-Transistor |
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BSP32T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos |
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BSP32TRL | NXP |
获取价格 |
暂无描述 |
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BSP32TRL13 | NXP |
获取价格 |
TRANSISTOR 0.1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |
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BSP32TRL13 | YAGEO |
获取价格 |
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |
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