Datasheet > BSP31

BSP31

更新时间： 2024-11-05 22:39:39

品牌	Logo	应用领域
德欧泰克 - DIOTEC		/
页数	文件大小	规格书
2页	118K
描述
Surface mount Si-Epitaxial PlanarTransistors

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数据手册

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BSP31 数据手册

BSP 30 ... BSP 33

PNP

Switching Transistors

PNP

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

6.5^±0.2

3^±0.1

Power dissipation – Verlustleistung

1.3 W

1.65

Plastic case

SOT-223

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.04 g

Plastic material has UL classification 94V-0

0.7

Gehäusematerial UL94V-0 klassifiziert

2.3

3.25

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions / Maße in mm

1 = B 2, 4 = C 3 = E

Maximum ratings (T_A= 25ꢀC)

Grenzwerte (T_A= 25ꢀC)

BSP 30

BSP 32

BSP 31

60 V

BSP 33

Collector-Emitter-voltage

Collector-Base-voltage

Emitter-Base-voltage

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

B open

E open

C open

- V_CE0

- V_CB0

- V_EB0

P_tot

80 V

90 V

70 V

5 V

1.3 W ¹)

1 A

- I_C

Peak Collector current – Koll.-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

Junction temp. – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

- I_CM

- I_BM

T_j

2 A

200 mA

150ꢀC

T_S

- 65…+ 150ꢀC

Characteristics (T_j= 25ꢀC)

Kennwerte (T_j= 25ꢀC)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I_E= 0, - V_CB= 60 V

- I_CB0

–

100 nA

50 ꢀA

I_E= 0, - V_CB= 60 V, T_j= 150ꢀC

Emitter-Base cutoff current – Emitterreststrom

I_C= 0, - V_EB= 5 V

- I_CB0

- I_EB0

–

100 nA

Collector saturation volt. – Kollektor-Sättigungsspg. ²)

- I_C= 150 mA, - I_B= 15 mA

- I_C= 500 mA, - I_B= 50 mA

- V_CEsat

–

250 mV

500 mV

)

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluß

Tested with pulses t_p= 300 ꢀs, duty cycle ꢀ 2% – Gemessen mit Impulsen t_p= 300 ꢀs, Schaltverhältnis ꢀ 2%

01.11.2003

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