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BSP304A,126 PDF预览

BSP304A,126

更新时间: 2024-09-17 03:20:39
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
9页 75K
描述
BSP304A - P-channel vertical D-MOS intermediate level FET TO-92 3-Pin

BSP304A,126 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:300 V最大漏极电流 (ID):0.17 A
最大漏源导通电阻:17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):15 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

BSP304A,126 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BSP304; BSP304A  
P-channel enhancement mode  
vertical D-MOS transistors  
1995 Apr 07  
Product specification  
File under Discrete Semiconductors, SC07  
Philips Semiconductors  

BSP304A,126 替代型号

型号 品牌 替代类型 描述 数据表
BSP254A,126 NXP

类似代替

BSP254A - P-channel vertical D-MOS intermediate level FET TO-92 3-Pin
BSP304A NXP

类似代替

P-channel enhancement mode vertical D-MOS transistors

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