Datasheet > BSP308

BSP308

更新时间： 2024-09-15 23:35:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	80K
描述
?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ?

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP308 数据手册

Preliminary data

BSP308

SIPMOS Small-Signal-Transistor

Features

Product Summary

• N-Channel

Drain source voltage

• Enhancement mode

Drain-Source on-state resistance R

0.05

4.7

Ω

DS(on)

• Logic Level

• dv/dt rated

Continuous drain current

VPS05163

Type

Package

SOT-223

Ordering Code

Pin 1 Pin 2/4 PIN 3

BSP308

Q67000-S4011

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

4.7

3.9

T = 70 °C

Pulsed drain current

18.8

D puls

T = 25 °C

Reverse diode dv/dt

dv/dt

kV/µs

I = 4.7 A, V = 20 V, di/dt = 200 A/µs,

= 150 °C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55...+150

55/150/56

°C

stg

Page 1

1999-09-22

12 3 4 5 6 7...9

中文翻译

下载PDF

与BSP308相关器件

型号	品牌	获取价格	描述	数据表
BSP30T/R	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| SOT-223
BSP30-TAPE-13	NXP	获取价格	TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP30-TAPE-7	NXP	获取价格	TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP30TRL	NXP	获取价格	TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP30TRL	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BSP30TRL13	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BSP30TRL13	NXP	获取价格	TRANSISTOR 1 A, 60 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP31	NXP	获取价格	PNP medium power transistors
BSP31	STMICROELECTRONICS	获取价格	MEDIUM POWER AMPLIFIER
BSP31	DIOTEC	获取价格	Surface mount Si-Epitaxial PlanarTransistors