Datasheet > BSP316P_07

BSP316P_07

更新时间： 2024-11-27 12:50:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	126K
描述
SIPMOS Small-Signal-Transistor

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数据手册

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BSP316P_07 数据手册

BSP 316 P

SIPMOS Small-Signal-Transistor

Feature

Product Summary

-100

1.8

Ω

• P-Channel

DS(on)

• Enhancement mode

• Logic Level

-0.68

PG-SOT223-4-1

• dv/dt rated

Drain

pin 2/4

Gate

pin1

Source

pin 3

Type

Package

Tape and Reel Information Marking

PG-SOT223-4-1

BSP 316 P

L6327: 1000 pcs/reel

BSP316P

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-0.68

T =70°C

-0.54

-2.72

Pulsed drain current

D puls

T =25°C

kV/µs

Reverse diode dv/dt

dv/dt

I =-0.68A, V =-48V, di/dt=-200A/µs, T =150°C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Rev.1.5

Page 1

2007-02-23

12 3 4 5 6 7 8

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