是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.63 | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 60 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 2.6 A | 最大漏源导通电阻: | 0.15 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 10.4 A | 参考标准: | AEC-Q101 |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP318SH6327XTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Met | |
BSP318SL6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Met | |
BSP318SL6327HTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Met | |
BSP319 | INFINEON |
获取价格 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated) | |
BSP31-T | NXP |
获取价格 |
1A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN | |
BSP31T/R | NXP |
获取价格 |
1A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN | |
BSP31TA | ZETEX |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BSP31-TAPE-13 | NXP |
获取价格 |
1A, 60V, PNP, Si, POWER TRANSISTOR | |
BSP31-TAPE-7 | NXP |
获取价格 |
1A, 60V, PNP, Si, POWER TRANSISTOR | |
BSP31TC | ZETEX |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |