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BSP320SH6433 PDF预览

BSP320SH6433

更新时间: 2024-11-20 14:49:19
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲光电二极管晶体管
页数 文件大小 规格书
9页 485K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP320SH6433 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.65Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):60 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2.9 A最大漏极电流 (ID):2.9 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.8 W最大脉冲漏极电流 (IDM):11.6 A
参考标准:AEC-Q101子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BSP320SH6433 数据手册

 浏览型号BSP320SH6433的Datasheet PDF文件第2页浏览型号BSP320SH6433的Datasheet PDF文件第3页浏览型号BSP320SH6433的Datasheet PDF文件第4页浏览型号BSP320SH6433的Datasheet PDF文件第5页浏览型号BSP320SH6433的Datasheet PDF文件第6页浏览型号BSP320SH6433的Datasheet PDF文件第7页 
BSP320S  
x Pb-free lead plating; RoHS compliant  
x Qualified according to AEC Q101  
Halogen­free according to IEC61249­2­21  
Packaging  
Tape and Reel  
H6327: 1000pcs/r  
H6433: 4000pcs/r  
PG-SOT223  
PG-SOT223  
Non dry  
Non dry  
Rev 2.5  
2012-11-28  

BSP320SH6433 替代型号

型号 品牌 替代类型 描述 数据表
BSP320SH6327XTSA1 INFINEON

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