Datasheet > BSP324_09

BSP324_09

更新时间： 2024-11-24 09:00:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	339K
描述
SIPMOS Power-Transistor

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中文翻译

获取价格

数据手册

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BSP324_09 数据手册

Rev. 2.1

BSP324



SIPMOS Power-Transistor

Product Summary

Feature

400

Ω

• N-Channel

• Enhancement mode

• Logic Level

DS(on)

0.17

SOT-223

• dv/dt rated

• Pb-free lead plating; RoHS compliant

x Qualified according to AEC Q101

Packaging

Type

Package

Pb-free

Tape and Reel Information Marking

PG-SOT223

Yes

Non dry

L6327: 1000 pcs/reel

BSP324

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

0.17

0.14

0.68

T =70°C

Pulsed drain current

D puls

T =25°C

kV/µs

Reverse diode dv/dt

dv/dt

I =0.17A, V =320V, di/dt=200A/µs, T

=175°C

jmax

Gate source voltage

1A (>250V, <500V)

1.8

tot

ESD Class (JESD22-A114-HBM)

Power dissipation

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Page 1

2009-08-18

12 3 4 5 6 7 8

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