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BSP322P_11 PDF预览

BSP322P_11

更新时间: 2024-11-20 09:00:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 276K
描述
SIPMOS Small-Signal-Transistor

BSP322P_11 数据手册

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BSP322P  
SIPMOS® Small-Signal-Transistor  
Product Summary  
Features  
V DS  
-100  
V
• P-Channel  
R DS(on),max  
I D  
800  
-1  
mΩ  
A
• Enhancement mode  
• Logic level  
• Avalanche rated  
PG-SOT-223  
• Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
Type  
Package  
Tape and Reel Information  
Marking  
Lead free  
Packing  
BSP322P  
PG-SOT-223  
L6327: 1000 pcs/reel  
BSP322P  
Yes  
Non dry  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=70 °C  
T C=25 °C  
1
Continuous drain current  
A
0.8  
I D,pulse  
E AS  
4
57  
Pulsed drain current  
I D=-1 A, R GS=25 Ω  
Avalanche energy, single pulse  
Gate source voltage  
mJ  
V
V GS  
±20  
P tot  
T C=25 °C  
1.8  
Power dissipation  
W
°C  
T j, T stg  
-55 ... 150  
1A (250V to 500V)  
260 °C  
Operating and storage temperature  
ESD Class  
JESD22-A114-HBM  
Soldering temperature  
IEC climatic category; DIN IEC 68-1  
55/150/56  
Rev 1.04  
page 1  
2011-04-05  

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