型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP324E6327 | INFINEON |
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Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Met | |
BSP324L6327 | INFINEON |
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SIPMOSï Power-Transistor | |
BSP3-277 | ETC |
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3-Pole LED Driver Ballast Surge Protectors, Enhanced | |
BSP32-T | NXP |
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TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BSP32T/R | NXP |
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TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BSP32-TAPE-13 | NXP |
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TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP32-TAPE-7 | NXP |
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TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP32TRL | NXP |
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暂无描述 | |
BSP32TRL13 | YAGEO |
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Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 | |
BSP32TRL13 | NXP |
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TRANSISTOR 0.1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power |