是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 10 weeks |
风险等级: | 2.22 | 其他特性: | AVALANCHE RATED |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 0.98 A |
最大漏源导通电阻: | 0.9 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 42 pF | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP322P | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSP322P_11 | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSP324 | INFINEON |
获取价格 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |
BSP324_09 | INFINEON |
获取价格 |
SIPMOS Power-Transistor | |
BSP3-240 | ETC |
获取价格 |
3-Pole LED Driver Ballast Surge Protectors, Enhanced | |
BSP324E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Met | |
BSP324L6327 | INFINEON |
获取价格 |
SIPMOSï Power-Transistor | |
BSP3-277 | ETC |
获取价格 |
3-Pole LED Driver Ballast Surge Protectors, Enhanced | |
BSP32-T | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BSP32T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos |