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BSP321PH6327XTSA1 PDF预览

BSP321PH6327XTSA1

更新时间: 2024-11-20 21:03:19
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网光电二极管晶体管
页数 文件大小 规格书
9页 476K
描述
Small Signal Field-Effect Transistor, 0.98A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP321PH6327XTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:10 weeks
风险等级:2.22其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):0.98 A
最大漏源导通电阻:0.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):42 pFJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BSP321PH6327XTSA1 数据手册

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BSP321P  
SIPMOS® Small-Signal-Transistor  
Product Summary  
Features  
VDS  
-100  
900  
V
• P-Channel  
RDS(on),max  
ID  
mW  
A
• Enhancement mode  
-0.98  
• Normal level  
• Avalanche rated  
PG-SOT-223  
• Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Tape and Reel Information  
H6327: 1000 pcs/reel  
Marking  
Lead free  
Yes  
Packing  
BSP321P  
PG-SOT-223  
BSP321P  
Non dry  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
-0.98  
-0.79  
-3.9  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=70 °C  
T C=25 °C  
Continuous drain current  
A
I D,pulse  
Pulsed drain current  
E AS  
57  
I D=-0.98 A, R GS=25 W  
Avalanche energy, single pulse  
mJ  
V GS  
±20  
1.8  
Gate source voltage  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
-55 ... 150  
1A (250V to 500V)  
260 °C  
Operating and storage temperature  
ESD Class  
JESD22-A114-HBM  
Soldering temperature  
IEC climatic category; DIN IEC 68-1  
55/150/56  
Rev 1.05  
page 1  
2012-11-27  

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