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BSP320SE6327 PDF预览

BSP320SE6327

更新时间: 2024-11-27 21:13:43
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
9页 483K
描述
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

BSP320SE6327 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.27
配置:SINGLE最小漏源击穿电压:60 V
最大漏极电流 (ID):2.9 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):255
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BSP320SE6327 数据手册

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BSP320S  
x Pb-free lead plating; RoHS compliant  
x Qualified according to AEC Q101  
Halogen­free according to IEC61249­2­21  
Packaging  
Tape and Reel  
H6327: 1000pcs/r  
H6433: 4000pcs/r  
PG-SOT223  
PG-SOT223  
Non dry  
Non dry  
Rev 2.5  
2012-11-28  

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