Datasheet > BSP316E-6327

BSP316E-6327

更新时间： 2024-11-25 03:26:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	118K
描述
Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP316E-6327 数据手册

BSP 316

SIPMOS Small-Signal Transistor

• P channel

• Enhancement mode

• Logic Level

• V

= -0.8...-2.0 V

GS(th)

Pin 1

Pin 2

Pin 3

Pin 4

Type

Package

Marking

V_DS

I_D

R_DS(on)

Ω

BSP 316

-100 V

-0.65 A

2.2

SOT-223

BSP 316

Type

Ordering Code

Tape and Reel Information

BSP 316

Q67000-S92

E6327

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

-100

DGR

Ω

= 20 k

-100

Gate source voltage

Continuous drain current

T = 24 ˚C

-0.65

-2.6

1.8

DC drain current, pulsed

Dpuls

T = 25 ˚C

Power dissipation

tot

T = 25 ˚C

Data Sheet

05.99

12 3 4 5 6 7 8

中文翻译

下载PDF

与BSP316E-6327相关器件

型号	品牌	获取价格	描述	数据表
BSP316P	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP316P_07	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP316PE6327	INFINEON	获取价格	SIPMOS Small-Signal-Transistor Feature
BSP316PH6327	INFINEON	获取价格	Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Me
BSP316PH6327HTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Me
BSP316PH6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Me
BSP317	INFINEON	获取价格	SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP317E6327	INFINEON	获取价格	暂无描述
BSP317P	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP317P_11	INFINEON	获取价格	SIPMOS Small-Signal-Transistor