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BSP315P_07 PDF预览

BSP315P_07

更新时间: 2024-11-06 09:00:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 483K
描述
SIPMOS Small-Signal-Transistor

BSP315P_07 数据手册

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BSP 315 P  
SIPMOS Small-Signal-Transistor  
Features  
Product Summary  
P-Channel  
Drain source voltage  
V
-60  
0.8  
V
DS  
Enhancement mode  
Drain-Source on-state resistance R  
DS(on)  
Avalanche rated  
Logic Level  
Continuous drain current  
I
-1.17  
A
D
4
dv/dt rated  
Pin 1 Pin2/4 PIN 3  
3
2
G
D
S
1
VPS05163  
Type  
Package  
Tape and Reel Information Marking  
L6327: 1000 pcs/reel BSP315 P  
PG-SOT-223  
BSP315 P  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
D
A
T = 25 °C  
-1.17  
-0.94  
A
T = 70 °C  
A
Pulsed drain current  
I
-4.68  
D puls  
T = 25 °C  
A
Avalanche energy, single pulse  
E
24  
mJ  
AS  
I = -1.17 A , V = -25 V, R = 25 Ω  
D
DD  
GS  
Avalanche energy, periodic limited by T  
E
0.18  
6
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = -1.17 A, V = -48 V, di/dt = 200 A/µs,  
S
DS  
T
= 150 °C  
jmax  
Gate source voltage  
Power dissipation  
V
V
±20  
GS  
P
1.8  
W
tot  
T = 25 °C  
A
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55...+150  
55/150/56  
°C  
j
stg  
Rev.1.4  
Page 1  
2007-02-08  

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