Datasheet > BSP315P_07

BSP315P_07

更新时间： 2024-11-24 09:00:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	483K
描述
SIPMOS Small-Signal-Transistor

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数据手册

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BSP315P_07 数据手册

BSP 315 P

SIPMOS Small-Signal-Transistor

Features

Product Summary

• P-Channel

Drain source voltage

-60

0.8

• Enhancement mode

Drain-Source on-state resistance R

Ω

DS(on)

• Avalanche rated

• Logic Level

Continuous drain current

-1.17

• dv/dt rated

Pin 1 Pin2/4 PIN 3

VPS05163

Type

Package

Tape and Reel Information Marking

L6327: 1000 pcs/reel BSP315 P

PG-SOT-223

BSP315 P

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

-1.17

-0.94

T = 70 °C

Pulsed drain current

-4.68

D puls

T = 25 °C

Avalanche energy, single pulse

I = -1.17 A , V = -25 V, R = 25 Ω

Avalanche energy, periodic limited by T

0.18

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I = -1.17 A, V = -48 V, di/dt = 200 A/µs,

= 150 °C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55...+150

55/150/56

°C

stg

Rev.1.4

Page 1

2007-02-08

12 3 4 5 6 7...9

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