Datasheet > BSP315PL6327HTSA1

BSP315PL6327HTSA1

更新时间： 2024-11-27 12:53:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	486K
描述
SIPMOS Small-Signal-Transistor

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数据手册

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BSP315PL6327HTSA1 数据手册

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BSP315P

SIPMOS Small-Signal-Transistor

Features

Product Summary

• P-Channel

Drain source voltage

-60

0.8

• Enhancement mode

Drain-Source on-state resistance R

Ω

DS(on)

• Avalanche rated

• Logic Level

Continuous drain current

-1.17

• dv/dt rated

Pin 1 Pin2/4 PIN 3

• Qualified according to AEC Q101

VPS05163

•

Halogenfree according to IEC61249221

Type

Package

Tape and Reel Information Marking

H6327: 1000 pcs/reel BSP315P

Packaging

PG-SOT223

BSP315P

Non dry

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

-1.17

-0.94

T = 70 °C

Pulsed drain current

-4.68

D puls

T = 25 °C

Avalanche energy, single pulse

I = -1.17 A , V = -25 V, R = 25 Ω

Avalanche energy, periodic limited by T

0.18

jmax

Reverse diode dv/dt

dv/dt

kV/µs

I = -1.17 A, V = -48 V, di/dt = 200 A/µs,

= 150 °C

jmax

Gate source voltage

Power dissipation

±20

1.8

tot

T = 25 °C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

ESD Class; JESD22-A114-HBM

-55...+150

55/150/56

Class 0

°C

stg

Rev.1.7

Page 1

2012-11-26

12 3 4 5 6 7...10

中文翻译

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