型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP316E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Me | |
BSP316E-6327 | INFINEON |
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Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Me | |
BSP316P | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSP316P_07 | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSP316PE6327 | INFINEON |
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SIPMOS Small-Signal-Transistor Feature | |
BSP316PH6327 | INFINEON |
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Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Me | |
BSP316PH6327HTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Me | |
BSP316PH6327XTSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.68A I(D), 100V, 1.8ohm, 1-Element, P-Channel, Silicon, Me | |
BSP317 | INFINEON |
获取价格 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) | |
BSP317E6327 | INFINEON |
获取价格 |
暂无描述 |