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BSP316 PDF预览

BSP316

更新时间: 2024-11-23 22:39:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 176K
描述
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)

BSP316 数据手册

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BSP 316  
®
SIPMOS Small-Signal Transistor  
• P channel  
• Enhancement mode  
• Logic Level  
• V  
= -0.8...-2.0 V  
GS(th)  
Pin 1 Pin 2 Pin 3 Pin 4  
G
D
S
D
Type  
V
I
R
DS(on)  
Package  
Marking  
DS  
D
BSP 316  
-100 V  
-0.65 A 2.2  
SOT-223  
BSP 316  
Type  
Ordering Code  
Tape and Reel Information  
BSP 316  
Q67000-S92  
E6327  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
V
-100  
V
DS  
DGR  
R
= 20 k  
-100  
GS  
±
20  
Gate source voltage  
V
GS  
Continuous drain current  
I
A
D
T = 24 °C  
-0.65  
-2.6  
1.8  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
A
Power dissipation  
P
W
tot  
T = 25 °C  
A
Semiconductor Group  
1
Sep-12-1996  

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