Datasheet > BSP315E6327

BSP315E6327

更新时间： 2024-11-10 03:18:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	174K
描述
Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSP315E6327 数据手册

BSP 315

SIPMOS Small-Signal Transistor

• P channel

• Enhancement mode

• Logic Level

• V

= -0.8...-2.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

Package

Marking

DS(on)

Ω

BSP 315

-50 V

-1.1 A

0.8

SOT-223

BSP 315

Type

BSP 315

Ordering Code

Q67000-S75

Q67000-S249

Tape and Reel Information

E6327

E6433

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain source voltage

Drain-gate voltage

-50

DGR

= 20 kΩ

-50

Gate source voltage

Continuous drain current

T = 39 °C

-1.1

-4.4

1.8

DC drain current, pulsed

Dpuls

T = 25 °C

Power dissipation

tot

T = 25 °C

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

中文翻译

下载PDF

与BSP315E6327相关器件

型号	品牌	获取价格	描述	数据表
BSP315E6433	INFINEON	获取价格	Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Meta
BSP315P	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP315P	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C
BSP315P_07	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP315P-E6327	INFINEON	获取价格	SIPMOSÃ Small-Signal-Transistor
BSP315PH6327XTSA1	INFINEON	获取价格	Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Met
BSP315PL6327	INFINEON	获取价格	SIPMOSÂ® Small-Signal-Transistor
BSP315PL6327HTSA1	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSP316	INFINEON	获取价格	SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
BSP316E6327	INFINEON	获取价格	Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Me