是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
针数: | 4 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.68 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 36 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (Abs) (ID): | 0.19 A | 最大漏极电流 (ID): | 0.19 A |
最大漏源导通电阻: | 20 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 3 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.8 W | 最大脉冲漏极电流 (IDM): | 0.76 A |
参考标准: | AEC-Q101 | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP300H6327XUSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Met | |
BSP300L6327 | INFINEON |
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Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Met | |
BSP300L6327HUSA1 | INFINEON |
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Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Met | |
BSP300L6433 | INFINEON |
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Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Met | |
BSP304 | NXP |
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P-channel enhancement mode vertical D-MOS transistors | |
BSP304A | NXP |
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P-channel enhancement mode vertical D-MOS transistors | |
BSP304A,126 | NXP |
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BSP304A - P-channel vertical D-MOS intermediate level FET TO-92 3-Pin | |
BSP304AAMO | NXP |
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TRANSISTOR 170 mA, 300 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SPT, TO-92 | |
BSP304T/R | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 300V V(BR)DSS | 170MA I(D) | TO-92VAR | |
BSP308 | ETC |
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?Small Signal MOSFET.30V. SOT-223. RDSon = 75mOhm. 4.7A. LL ? |