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BSP300H6327 PDF预览

BSP300H6327

更新时间: 2024-11-06 21:18:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲光电二极管晶体管
页数 文件大小 规格书
9页 390K
描述
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP300H6327 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.68其他特性:AVALANCHE RATED
雪崩能效等级(Eas):36 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):0.19 A最大漏极电流 (ID):0.19 A
最大漏源导通电阻:20 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.8 W最大脉冲漏极电流 (IDM):0.76 A
参考标准:AEC-Q101子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

BSP300H6327 数据手册

 浏览型号BSP300H6327的Datasheet PDF文件第2页浏览型号BSP300H6327的Datasheet PDF文件第3页浏览型号BSP300H6327的Datasheet PDF文件第4页浏览型号BSP300H6327的Datasheet PDF文件第5页浏览型号BSP300H6327的Datasheet PDF文件第6页浏览型号BSP300H6327的Datasheet PDF文件第7页 
BSP300  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
V  
= 2.0... 4.0 V  
GS(th)  
Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
Halogen­free according to IEC61249­2­21  
Pin 1  
G
Pin 2  
D
Pin 3  
S
Pin 4  
D
Type  
Package  
PG-SOT223  
Marking  
VDS  
ID  
RDS(on)  
20  
BSP300  
800 V  
0.19 A  
BSP300  
Type  
BSP300  
RoHS compliant  
Tape and Reel Information Packaging  
H6327  
Dry  
Yes  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.19  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
0.76  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 0.8 A, V = 50 V, R = 25  
D
DD  
GS  
L = 105 mH, T = 25 °C  
36  
20  
j
Gate source voltage  
Power dissipation  
V
V
GS  
P
W
tot  
T = 25 °C  
1.8  
A
ESD Class  
Class 1a  
JESD22-A114-HBM  
Rev 2.2  
Page 1  
2012-11-29  

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