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BSP300L6327 PDF预览

BSP300L6327

更新时间: 2024-11-24 14:41:11
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲光电二极管晶体管
页数 文件大小 规格书
9页 313K
描述
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

BSP300L6327 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:GREEN, PLASTIC PACKAGE-4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.16
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):36 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):0.19 A最大漏极电流 (ID):0.19 A
最大漏源导通电阻:20 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.8 W
最大脉冲漏极电流 (IDM):0.76 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

BSP300L6327 数据手册

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BSP300  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
V  
= 2.0... 4.0 V  
GS(th)  
Pb-free lead plating; RoHS compliant  
• Qualified according to AEC Q101  
Pin 1  
G
Pin 2  
D
Pin 3  
Pin 4  
D
S
Type  
Package  
PG-SOT223  
Marking  
VDS  
ID  
RDS(on)  
20  
BSP300  
800 V  
0.19 A  
BSP300  
Type  
BSP300  
RoHS compliant  
Tape and Reel Information Packaging  
L6327  
Dry  
Yes  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.19  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
0.76  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 0.8 A, V = 50 V, R = 25  
D
DD  
GS  
L = 105 mH, T = 25 °C  
36  
20  
j
Gate source voltage  
Power dissipation  
V
V
GS  
P
W
tot  
T = 25 °C  
1.8  
A
Rev 2.0  
Page 1  
2008-03-26  

BSP300L6327 替代型号

型号 品牌 替代类型 描述 数据表
BSP135 INFINEON

完全替代

SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
BSP324 INFINEON

类似代替

SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSP300 INFINEON

类似代替

SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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