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BSP299_09 PDF预览

BSP299_09

更新时间: 2024-11-24 09:00:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 260K
描述
SIPMOS Small-Signal Transistor

BSP299_09 数据手册

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BSP 299  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
V  
= 2.1 ... 4.0 V  
GS(th)  
• Pb-free lead plating; RoHS compliant  
Pin 1  
G
Pin 2  
D
Pin 3  
Pin 4  
D
S
Type  
Package  
Marking  
VDS  
ID  
RDS(on)  
BSP 299  
500 V  
0.4 A  
4
SOT-223  
BSP299  
Type  
Pb-free  
Tape and Reel Information  
BSP 299  
Yes  
L6327  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.4  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
1.6  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 1.2 A, R = 25  
D
GS  
T = 25 °C  
130  
20  
j
Gate source voltage  
Power dissipation  
V
V
GS  
P
W
tot  
T = 25 °C  
1.8  
A
Rev 2.1  
1
2009-03-25  

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