型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP299E6327 | INFINEON |
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Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal | |
BSP299E-6327 | INFINEON |
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0.4A, 500V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | |
BSP299H6327 | INFINEON |
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Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal | |
BSP299H6327XUSA1 | INFINEON |
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Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal | |
BSP299Q67000-S225 | INFINEON |
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TRANSISTOR MOSFET SMD SOT 223 | |
BSP30 | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors | |
BSP30 | STMICROELECTRONICS |
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MEDIUM POWER AMPLIFIER | |
BSP300 | INFINEON |
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SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) | |
BSP300_08 | INFINEON |
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SIPMOS Small-Signal Transistor | |
BSP300E6327 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Met |