Datasheet > BSP299Q67000-S225

BSP299Q67000-S225

更新时间： 2024-11-26 23:35:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	171K
描述
TRANSISTOR MOSFET SMD SOT 223

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BSP299Q67000-S225 数据手册

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BSP 299

SIPMOS Small-Signal Transistor

• N channel

• Enhancement mode

• Avalanche rated

• V

= 2.1 ... 4.0 V

GS(th)

Pin 1 Pin 2 Pin 3 Pin 4

Type

DS(on)

Package

Marking

BSP 299

500 V

0.4 A

4 Ω

SOT-223

BSP 299

Type

Ordering Code

Tape and Reel Information

BSP 299

Q67000-S225

E6327

Maximum Ratings

Parameter

Symbol

Values

0.4

Unit

Continuous drain current

T = 44 °C

DC drain current, pulsed

Dpuls

T = 25 °C

1.6

Avalanche energy, single pulse

Ω

I = 1.2 A, V = 50 V, R = 25

L = 163 mH, T = 25 °C

130

Gate source voltage

Power dissipation

± 20

tot

T = 25 °C

1.8

Semiconductor Group

Sep-12-1996

12 3 4 5 6 7...9

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