Datasheet > BFP193Q62702-F1282

BFP193Q62702-F1282

更新时间： 2024-11-10 23:35:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
7页	64K
描述
TRANSISTOR UHF BIPOLAR BREITBAND

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BFP193Q62702-F1282 数据手册

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BFP 193

NPN Silicon RF Transistor

• For low noise, high-gain amplifiers up to 2GHz

• For linear broadband amplifiers

• f = 8GHz

F = 1.3dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 193

RCs

Q62702-F1282

1 = C 2 = E 3 = B 4 = E SOT-143

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

≤

72 °C

580

Junction temperature

Ambient temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction - soldering point

thJS

135

K/W

1) T is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Dec-13-1996

12 3 4 5 6 7

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