5秒后页面跳转
捷配首页

Datasheet > AUIRL1404ZSTRR
AUIRL1404ZSTRR PDF预览

AUIRL1404ZSTRR

更新时间： 2024-11-20 14:47:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 376K
描述
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

阅读下载

中文翻译

获取价格

AUIRL1404ZSTRR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.13
其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE雪崩能效等级（Eas）：490 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：40 V最大漏极电流 (Abs) (ID)：180 A
最大漏极电流 (ID)：160 A最大漏源导通电阻：0.0031 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：200 W最大脉冲漏极电流 (IDM)：790 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRL1404ZSTRR 数据手册

 浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第2页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第3页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第4页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第5页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第6页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第7页 
PD - 96331  
AUTOMOTIVE GRADE  
AUIRL1404Z  
AUIRL1404ZS  
AUIRL1404ZL  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
Logic Level  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
V(BR)DSS  
40V  
D
RDS(on) typ.  
2.5m  
Ω
Ω
max. 3.1m  
ID (Silicon Limited)  
G
180A  
S
ID (Package Limited)  
160A  
Description  
D
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fastswitchingspeedandimprovedrepetitiveavalanche  
rating. Thesefeaturescombinetomakethisdesignan  
extremely efficient and reliable device for use in  
Automotive applications and a wide variety of other  
applications.  
D
S
D
S
S
D
G
G
D
G
D2Pak  
AUIRL1404ZS AUIRL1404ZL  
TO-262  
TO-220AB  
AUIRL1404Z  
G
D
S
AbsoluteMaximumRatings  
Gate  
Drain  
Source  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
180  
Units  
I
I
I
I
@ T = 25°C  
C
(Silicon Limited)  
D
D
D
@ T = 100°C  
C
130  
160  
790  
200  
Continuous Drain Current, VGS @ 10V(Silicon Limited)  
A
@ T = 25°C  
C
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
1.3  
± 16  
W/°C  
V
V
GS  
EAS  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
190  
mJ  
EAS (Tested )  
IAR  
490  
See Fig.12a, 12b, 15, 16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
STG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.75  
–––  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
62  
40  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/26/10  
1234567...15

中文翻译

下载PDF

AUIRL1404ZSTRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRL1404ZS INFINEON

类似代替

 Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
IRL1404ZSTRLPBF INFINEON

类似代替

 Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Me
IRF4104SPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET

与AUIRL1404ZSTRR相关器件

型号 品牌 获取价格 描述 数据表
AUIRL2203N INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
AUIRL3705N INFINEON

获取价格

 		Power Field-Effect Transistor, 89A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
AUIRL3705Z INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZL INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZS INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZSTRL INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL3705ZSTRR INFINEON

获取价格

 		Logic Level Advanced Process Technology
AUIRL7732S2 INFINEON

获取价格

 		DirectFETPower MOSFET
AUIRL7732S2TR INFINEON

获取价格

 		Power Field-Effect Transistor, 14A I(D), 40V, 0.0066ohm, 1-Element, N-Channel, Silicon, Me
AUIRL7732S2TR1 INFINEON

获取价格

 		DirectFETPower MOSFET

与AUIRL1404ZSTRR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证