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AUIRL1404ZSTRR

更新时间： 2024-01-15 03:56:58
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
15页 376K
描述
Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

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AUIRL1404ZSTRR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.26其他特性：AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
雪崩能效等级（Eas）：490 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：180 A最大漏极电流 (ID)：160 A
最大漏源导通电阻：0.0031 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：200 W
最大脉冲漏极电流 (IDM)：790 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN OVER NICKEL端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON

AUIRL1404ZSTRR 数据手册

 浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第2页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第3页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第4页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第5页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第6页浏览型号AUIRL1404ZSTRR的Datasheet PDF文件第7页 
PD - 96331  
AUTOMOTIVE GRADE  
AUIRL1404Z  
AUIRL1404ZS  
AUIRL1404ZL  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
l
Logic Level  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
V(BR)DSS  
40V  
D
RDS(on) typ.  
2.5m  
Ω
Ω
max. 3.1m  
ID (Silicon Limited)  
G
180A  
S
ID (Package Limited)  
160A  
Description  
D
D
Specifically designed for Automotive applications,  
this HEXFET® Power MOSFET utilizes the latest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
design are a 175°C junction operating temperature,  
fastswitchingspeedandimprovedrepetitiveavalanche  
rating. Thesefeaturescombinetomakethisdesignan  
extremely efficient and reliable device for use in  
Automotive applications and a wide variety of other  
applications.  
D
S
D
S
S
D
G
G
D
G
D2Pak  
AUIRL1404ZS AUIRL1404ZL  
TO-262  
TO-220AB  
AUIRL1404Z  
G
D
S
AbsoluteMaximumRatings  
Gate  
Drain  
Source  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
180  
Units  
I
I
I
I
@ T = 25°C  
C
(Silicon Limited)  
D
D
D
@ T = 100°C  
C
130  
160  
790  
200  
Continuous Drain Current, VGS @ 10V(Silicon Limited)  
A
@ T = 25°C  
C
(Package Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
Gate-to-Source Voltage  
1.3  
± 16  
W/°C  
V
V
GS  
EAS  
Single Pulse Avalanche Energy (Thermally limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
190  
mJ  
EAS (Tested )  
IAR  
490  
See Fig.12a, 12b, 15, 16  
A
EAR  
mJ  
Repetitive Avalanche Energy  
T
J
-55 to + 175  
Operating Junction and  
T
STG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.75  
–––  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
0.50  
–––  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
°C/W  
62  
40  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
08/26/10  
1234567...15

中文翻译

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AUIRL1404ZSTRR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRL1404ZS INFINEON

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 Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, M
IRL1404ZSTRLPBF INFINEON

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 Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Me
IRF4104SPBF INFINEON

类似代替

 HEXFET㈢ Power MOSFET

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