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AUIRL7766M2TR PDF预览

AUIRL7766M2TR

更新时间： 2024-02-14 23:04:04
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
11页 237K
描述
Power Field-Effect Transistor, 10A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5

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AUIRL7766M2TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：CHIP CARRIER, R-XBCC-N5
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.33
其他特性：HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE雪崩能效等级（Eas）：237 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：51 A
最大漏极电流 (ID)：10 A最大漏源导通电阻：0.01 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：62.5 W
最大脉冲漏极电流 (IDM)：204 A子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRL7766M2TR 数据手册

 浏览型号AUIRL7766M2TR的Datasheet PDF文件第2页浏览型号AUIRL7766M2TR的Datasheet PDF文件第3页浏览型号AUIRL7766M2TR的Datasheet PDF文件第4页浏览型号AUIRL7766M2TR的Datasheet PDF文件第5页浏览型号AUIRL7766M2TR的Datasheet PDF文件第6页浏览型号AUIRL7766M2TR的Datasheet PDF文件第7页 
PD - 97648  
AUIRL7766M2TR  
AUIRL7766M2TR1  
AUTOMOTIVE GRADE  
Automotive DirectFET® Power MOSFET ‚  
V(BR)DSS  
RDS(on) typ.  
100V  
•
•
Advanced Process Technology  
Optimized for Automotive DC-DC and  
other Heavy Load Applications  
Logic Level Gate Drive  
Exceptionally Small Footprint and Low Profile  
High Power Density  
8.0m  
Ω
max.  
ID (Silicon Limited)  
Qg  
10m  
Ω
•
•
•
•
•
•
•
51A  
44nC  
Low Parasitic Parameters  
Dual Sided Cooling  
175°C Operating Temperature  
Repetitive Avalanche Capability for Robustness and  
Reliability  
Lead Free, RoHS Compliant and Halogen Free  
Automotive Qualified *  
S
S
S
S
G
D
D
•
•
DirectFET®ISOMETRIC  
M4  
Applicable DirectFET® Outline and Substrate Outline   
SB  
SC  
M2  
M4  
L4  
L6  
L8  
Description  
The AUIRL7766M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-  
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems.  
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging  
platform coupled with the latest silicon technology allows the AUIRL7766M2 to offer substantial system level savings and performance improvement  
specifically in high frequency DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing  
techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature  
and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high  
current automotive applications.  
AbsoluteMaximumRatings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured  
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
Parameter  
Units  
100  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
V
DS  
GS  
V
± 16  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
51  
I
I
I
I
@ T = 25°C  
C
D
D
D
36  
@ T = 100°C  
C
A
10  
@ TA = 25°C  
204  
DM  
62.5  
P
@TC = 25°C  
Power Dissipation  
D
W
2.5  
Power Dissipation  
P
@TA = 25°C  
D
EAS  
61  
237  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
EAS (tested)  
IAR  
See Fig. 18a,18b,16,17  
A
EAR  
Repetitive Avalanche Energy  
mJ  
270  
Peak Soldering Temperature  
T
T
T
P
-55 to + 175  
°C  
Operating Junction and  
J
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
Max.  
60  
Units  
°C/W  
W/°C  
RθJA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Can  
–––  
12.5  
20  
RθJA  
–––  
–––  
2.4  
RθJA  
RθJCan  
RθJ-PCB  
–––  
1.0  
Junction-to-PCB Mounted  
Linear Derating Factor  
–––  
0.42  
HEXFET® is a registered trademark of International Rectifier.  
www.irf.com  
1
03/18/11  
1234567...11

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