5秒后页面跳转
捷配首页

Datasheet > AUIRLI2505
AUIRLI2505 PDF预览

AUIRLI2505

更新时间： 2024-09-28 14:40:59
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
11页 242K
描述
Power Field-Effect Transistor, 58A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

AUIRLI2505 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.36
其他特性：AVALANCHE RATED, FAST SWITCHING雪崩能效等级（Eas）：500 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：55 V最大漏极电流 (Abs) (ID)：58 A
最大漏极电流 (ID)：58 A最大漏源导通电阻：0.01 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR元件数量：1
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：63 W最大脉冲漏极电流 (IDM)：360 A
参考标准：AEC-Q101子类别：FET General Purpose Power
表面贴装：NO处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

AUIRLI2505 数据手册

 浏览型号AUIRLI2505的Datasheet PDF文件第2页浏览型号AUIRLI2505的Datasheet PDF文件第3页浏览型号AUIRLI2505的Datasheet PDF文件第4页浏览型号AUIRLI2505的Datasheet PDF文件第5页浏览型号AUIRLI2505的Datasheet PDF文件第6页浏览型号AUIRLI2505的Datasheet PDF文件第7页 
PD - 97766  
AUTOMOTIVE GRADE  
AUIRLI2505  
Features  
l
Advanced Planar Technology  
HEXFET® Power MOSFET  
l
l
l
l
l
l
l
Logic-Level Gate Drive  
Low On-Resistance  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to  
Tjmax  
V(BR)DSS  
55V  
RDS(on) max. 8.0m  
ID  
58A  
l
l
Lead-Free, RoHS Compliant  
Automotive Qualified*  
Description  
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and rug-  
gedized device design that HEXFET power  
MOSFETs are well known for, provides the de-  
signer with an extremely efficient and reliable de-  
vice for use in Automotive and a wide variety of  
other applications.  
S
D
G
TO-220AB Full-Pak  
AUIRLI2505  
G
Gate  
D
Drain  
S
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in  
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect  
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air  
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
58  
Parameter  
Units  
Continuous Drain Current, VGS @ 10V  
@ T = 25°C  
C
I
I
I
D
D
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
41  
A
@ T = 100°C  
C
360  
DM  
63  
Power Dissipation  
@T = 25°C  
C
W
W/°C  
V
P
D
0.42  
± 16  
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
EAS  
IAR  
500  
54  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
6.3  
5.0  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
Mounting Torque, 6-32 or M3 screw  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
–––  
Max.  
2.4  
65  
Units  
°C/W  
RJC  
RJA  
Junction-to-Case  
Junction-to-Ambient  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
03/14/12  
1234567...11

中文翻译

下载PDF

与AUIRLI2505相关器件

型号 品牌 获取价格 描述 数据表
AUIRLL014N INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRLL014NTR INFINEON

获取价格

 		HEXFET® Power MOSFET
AUIRLL024N INFINEON

获取价格

 		Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
AUIRLL024NTR INFINEON

获取价格

 		Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
AUIRLL024Z INFINEON

获取价格

 		Advanced Process Technology
AUIRLL024ZTR INFINEON

获取价格

 		Advanced Process Technology
AUIRLL2705 INFINEON

获取价格

 		Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLL2705TR INFINEON

获取价格

 		Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR014N INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
AUIRLR014NTR INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

与AUIRLI2505相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证