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AUIRLL014NTR PDF预览

AUIRLL014NTR

更新时间： 2024-09-28 12:52:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管
页数 文件大小 规格书
12页 231K
描述
HEXFET® Power MOSFET

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中文翻译

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AUIRLL014NTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：7.9配置：Single
最大漏极电流 (Abs) (ID)：2.8 AFET 技术：METAL-OXIDE SEMICONDUCTOR
湿度敏感等级：1最高工作温度：150 °C
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.1 W子类别：FET General Purpose Power
表面贴装：YES处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

AUIRLL014NTR 数据手册

 浏览型号AUIRLL014NTR的Datasheet PDF文件第2页浏览型号AUIRLL014NTR的Datasheet PDF文件第3页浏览型号AUIRLL014NTR的Datasheet PDF文件第4页浏览型号AUIRLL014NTR的Datasheet PDF文件第5页浏览型号AUIRLL014NTR的Datasheet PDF文件第6页浏览型号AUIRLL014NTR的Datasheet PDF文件第7页 
PD- 97755  
AUTOMOTIVE GRADE  
AUIRLL014N  
HEXFET® Power MOSFET  
Features  
l Advanced Planar Technology  
l Low On-Resistance  
l Dynamic dv/dt Rating  
l 150°C Operating Temperature  
l Fast Switching  
l Fully Avalanche Rated  
l Repetitive Avalanche Allowed up to  
Tjmax  
D
V(BR)DSS  
RDS(on) max.  
ID  
55V  
0.14  
2.0A  
G
S
l Lead-Free, RoHS Compliant  
l Automotive Qualified*  
D
Description  
S
Specifically designed for Automotive applications, this  
cellular design of HEXFET® Power MOSFETs utilizes  
the latest processing techniques to achieve low on-  
resistance per silicon area. This benefit combined  
with the fast switching speed and ruggedized device  
design that HEXFET power MOSFETs are well known  
for, provides the designer with an extremely efficient  
and reliable device for use in Automotive and a wide  
variety of other applications.  
D
G
SOT-223  
AUIRLL014N  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
2.8  
2.0  
1.6  
16  
Units  
I
I
I
I
@ TA = 25°C  
@ TA = 25°C  
@ TA = 70°C  
D
D
D
A
DM  
2.1  
P
P
@TA = 25°C Power Dissipation (PCB Mount)  
D
D
W
1.0  
8.3  
Power Dissipation (PCB Mount)  
Linear Derating Factor (PCB Mount)  
Gate-to-Source Voltage  
@TA = 25°C  
mW/°C  
V
± 16  
V
GS  
EAS  
IAR  
32  
2.0  
Single Pulse Avalanche Energy (Thermally Limited)  
Avalanche Current  
mJ  
A
EAR  
0.1  
Repetitive Avalanche Energy  
Operating Junction and  
mJ  
-55 to + 150  
T
T
J
°C  
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Typ.  
90  
Max.  
120  
60  
Units  
RJA  
RJA  
Junction-to-Ambient (PCB mount, steady state)  
Junction-to-Ambient (PCB mount, steady state)  
°C/W  
50  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
01/20/12  
1234567...12

中文翻译

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AUIRLL014NTR 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLL014N INFINEON

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