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AUIRLR2905TRL PDF预览

AUIRLR2905TRL

更新时间： 2024-11-25 01:20:51
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 243K
描述
Advanced Planar Technology

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中文翻译

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AUIRLR2905TRL 数据手册

 浏览型号AUIRLR2905TRL的Datasheet PDF文件第2页浏览型号AUIRLR2905TRL的Datasheet PDF文件第3页浏览型号AUIRLR2905TRL的Datasheet PDF文件第4页浏览型号AUIRLR2905TRL的Datasheet PDF文件第5页浏览型号AUIRLR2905TRL的Datasheet PDF文件第6页浏览型号AUIRLR2905TRL的Datasheet PDF文件第7页 
AUIRLR2905  
AUIRLU2905  
HEXFET® Power MOSFET  
AUTOMOTIVE GRADE  
• Advanced Planar Technology  
• Logic-Level Gate Drive  
• Low On-Resistance  
• Dynamic dV/dT Rating  
• 175°C Operating Temperature  
• Fast Switching  
D
S
V(BR)DSS  
RDS(on) max.  
ID  
55V  
27m  
G
42A  
• Fully Avalanche Rated  
• Repetitive Avalanche Allowed up to Tjmax  
• Lead-Free, RoHS Compliant  
• Automotive Qualified  
D
S
S
Description  
D
G
G
Specifically designed for Automotive applications,  
this cellular design of HEXFET® Power MOSFETs  
utilizes the latest processing techniques to achieve  
low on-resistance per silicon area. This benefit  
combined with the fast switching speed and  
ruggedized device design that HEXFET power  
MOSFETs are well known for, provides the designer  
with an extremely efficient and reliable device for use  
in Automotive and a wide variety of other applications.  
D-Pak  
I-Pak  
AUIRLU2905  
AUIRLRU2905  
G
Gate  
D
S
Drain  
Source  
Base part number Package Type  
Standard Pack  
Complete Part Number  
Form  
Tube  
Tape and Reel  
Quantity  
75  
2000  
3000  
3000  
75  
AUIRLR2905  
Dpak  
AUIRLR2905  
AUIRLR2905TR  
AUIRLR2905TRL  
AUIRLR2905TRR  
AUIRLU2905  
Tape and Reel Left  
Tape and Reel Right  
Tube  
AUIRLU2905  
Ipak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These  
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Max.  
42  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Units  
I
I
I
@ T = 25°C  
C
D
30  
A
@ T = 100°C  
D
C
160  
DM  
Power Dissipation  
110  
0.71  
± 16  
W
W/°C  
V
P
@T = 25°C  
C
D
Linear Derating Factor  
Gate-to-Source Voltage  
V
GS  
210  
EAS  
Single Pulse Avalanche Energy (Thermally Limited)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
mJ  
200  
EAS (tested )  
25  
11  
IAR  
A
EAR  
Repetitive Avalanche Energy  
mJ  
Operating Junction and  
-55 to + 175  
T
T
J
Storage Temperature Range  
°C  
STG  
300  
Soldering Temperature, for 10 seconds (1.6mm from case )  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com © 2012 International Rectifier  
June 5, 2012 PD-97623A  
1
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中文翻译

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AUIRLR2905TRL 替代型号

型号 品牌 替代类型 描述 数据表
AUIRLR2905 INFINEON

完全替代

 Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRLR2905TRPBF INFINEON

类似代替

 Advanced Process Technology
IRLR2905PBF INFINEON

类似代替

 HEXFET Power MOSFET

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 		Specifically designed for Automotive applications
AUIRLR2905ZTR INFINEON

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AUIRLR2905ZTRL INFINEON

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AUIRLR2908 INFINEON

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TR INFINEON

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRL INFINEON

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR2908TRR INFINEON

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AUIRLR3105 INFINEON

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 		AUTOMOTIVE GRADE

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