Datasheet > AUIRLR3114ZTRL

AUIRLR3114ZTRL

更新时间： 2024-10-01 12:48:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	225K
描述
Advanced Process Technology

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AUIRLR3114ZTRL 数据手册

PD - 96381

AUTOMOTIVE GRADE

AUIRLR3114Z

AUIRLU3114Z

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS

40V

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Logic Level

R_DS(on)max @ 10V

max @ 4.5V

4.9m

6.5m

130A

I_{D (Silicon Limited)}

Lead-Free,RoHSCompliant

Automotive Qualified *

I_{D (Package Limited)}

42A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improvedrepetitiveavalancherating.Thesefeaturescom-

bine to make this design an extremely efficient and reliable

deviceforuseinAutomotiveapplicationsandawidevariety

of other applications.

I-Pak

AUIRLU3114Z

D-Pak

AUIRLR3114Z

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Max.

Units

130

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

500

140

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.95

±16

W/°C

V_GS

Gate-to-Source Voltage

E_{AS (Thermally limited)}

130

260

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

_AS(Tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

T_J

Repetitive Avalanche Energy

Operating Junction and

-55 to + 175

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds

300(1.6mm from case)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θJC

Junction-to-Case

R_θ

°C/W

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

R_θJA

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

06/22/11

12 3 4 5 6 7...14

中文翻译

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AUIRLR3114ZTRL 替代型号

型号	品牌	替代类型	描述	数据表
AUIRLR3114ZTRR	INFINEON	完全替代	Advanced Process Technology
AUIRLR3114ZTR	INFINEON	完全替代	Advanced Process Technology
IRLR3114ZTRPBF	INFINEON	类似代替	Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Me

与AUIRLR3114ZTRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRLR3114ZTRR	INFINEON	获取价格	Advanced Process Technology
AUIRLR3410	INFINEON	获取价格	HEXFET Power MOSFET
AUIRLR3410TR	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3410TRL	INFINEON	获取价格	Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TR	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TRL	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3636TRR	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Me
AUIRLR3705Z	INFINEON	获取价格	Logic Level Advanced Process Technology
AUIRLR3705ZTR	INFINEON	获取价格	Logic Level Advanced Process Technology

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